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Diode array

  • BT169D - copy
BT169D - copy

BT169D - copy

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General description

Passivated, sensitive gate thyristors in a SOT54 plastic package.


■ Designed to be interfaced directly to microcontrollers, logic integrated circuits and

other low power gate trigger circuits.


■ General purpose switching and phase control applications

Quick reference data

■ VDRM, VRRM ≤ 200 V (BT169B)     ■ IT(RMS) ≤ 0.8 A

■ VDRM, VRRM ≤ 400 V (BT169D)     ■ IT(AV) ≤ 0.5 A

■ VDRM, VRRM ≤ 600 V (BT169G)     ■ ITSM ≤ 8 A.


NXP Semiconductors



This BT169D,116 thyristor manufactured from NXP Semiconductors is a bistable switch, it will conduct when there is a current trigger and continue to be on when there is a forward bias voltage applied to it.


EU RoHS Compliant

Mounting Through Hole

Package Height (mm) 5.2(Max)

Package Length (mm) 4.8(Max)

Package Width (mm) 4.2(Max)

PCB changed 3

Supplier Package SPT

Pin Count 3


Contact: Ms. Yuan

Phone: 13632604232

Tel: 0756-8996108


Old address: 6/F, Huali Building, No. 341 Yanhedong Rd, Xiangzhou District, Zhuhai, Guangdong, China

New address: 1-C206, No.1 Hagongda Rd, Tangjiawan, New & High -tech development zone, Zhuhai, Guangdong Province, P.R. China

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