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Single chip microcomputer

  • H5TQ4G63AFR-PBC
H5TQ4G63AFR-PBC

H5TQ4G63AFR-PBC

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Description

The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR-xxC are a 4Gb CMOS Double Data Rate III

(DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.


FEATURES

• VDD=VDDQ=1.5V +/- 0.075V

• Fully differential clock inputs (CK, CK) operation

• Differential Data Strobe (DQS, DQS)

• On chip DLL align DQ, DQS and DQS transition with CK

transition

• DM masks write data-in at the both rising and falling

edges of the data strobe

• All addresses and control inputs except data, data

strobes and data masks latched on the rising edges of

the clock

• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 13 and

14 supported

• Programmable additive latency 0, CL-1, and CL-2

supported

• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9,

10

• Programmable burst length 4/8 with both nibble

sequential and interleave mode

• BL switch on the fly

• 8banks

• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)

- 7.8 µs at 0°C ~ 85 °C

- 3.9 µs at 85°C ~ 95 °C

• JEDEC standard 78ball FBGA(x4/x8), 96ball FBGA(x16

• Driver strength selected by EMRS

• Dynamic On Die Termination supported

• Asynchronous RESET pin supported

• ZQ calibration supported

• TDQS (Termination Data Strobe) supported (x8 only)

• Write Levelization supported

• 8 bit pre-fetch

• This product in compliance with the RoHS directive.

CONTACT US

Contact: Ms. Yuan

Phone: 13632604232

Tel: 0756-8996108

Email: joanna@yidesai.com

Old address: 6/F, Huali Building, No. 341 Yanhedong Rd, Xiangzhou District, Zhuhai, Guangdong, China

New address: 1-C206, No.1 Hagongda Rd, Tangjiawan, New & High -tech development zone, Zhuhai, Guangdong Province, P.R. China

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