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Alpha and Omega Semiconductor




Trans MOSFET N-CH 30V 11.6A 8-Pin SOIC

If you need to either amplify or switch between signals in your design, then Alpha & Omega Semiconductor's AO4468 power MOSFET is for you. Its maximum power dissipation is 3100 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

General Description

The AO4468 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in

PWM applications. The source leads are separated

to allow a Kelvin connection to the source, which

may be used to bypass the source inductance.

Standard Product AO4468 is Pb-free (meets ROHS

& Sony 259 specifications). AO4468L is a Green

Product ordering option. AO4468 and AO4468L are

electrically identical.


EU RoHS Compliant

Product Category Power MOSFET

Channel Mode Enhancement

Channel Type N

Number of Elements per Chip 1

Maximum Drain Source Voltage (V) 30

Maximum Gate Source Voltage (V) ±20

Maximum Continuous Drain Current (A) 11.6

Maximum Drain Source Resistance (mOhm) 14@10V

Typical Gate Charge @ Vgs (nC) 17@10V|9@4.5V

Typical Gate Charge @ 10V (nC) 17

Typical Input Capacitance @ Vds (pF) 955@15V

Maximum Power Dissipation (mW) 3100

Minimum Operating Temperature (°C) -55

Maximum Operating Temperature (°C) 150

Mounting Surface Mount

Package Height (mm) 1.5

Package Length (mm) 4.9

Package Width (mm) 3.9

PCB changed 8

Standard Package Name SOP

Supplier Package SOIC

Pin Count 8

Lead Shape Gull-wing


Contact: Ms. Yuan

Phone: 13632604232

Tel: 0756-8996108


Old address: 6/F, Huali Building, No. 341 Yanhedong Rd, Xiangzhou District, Zhuhai, Guangdong, China

New address: 1-C206, No.1 Hagongda Rd, Tangjiawan, New & High -tech development zone, Zhuhai, Guangdong Province, P.R. China

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