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  • AO3407A
AO3407A

AO3407A

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MANUFACTURER

Alpha and Omega Semiconductor


PRODUCT CATEGORY

MOSFET


DESCRIPTION

Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23


General Description

The AO3407A/L uses advanced trench technology to provide

excellent RDS(ON) with low gate charge. This device is suitable

for use as a load switch or in PWM applications. AO3407A

and AO3407AL are electrically identical.

-RoHS Compliant

-AO3407AL is Halogen Free


This AO3407A power MOSFET from Alpha & Omega Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1400 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


Features

VDS (V) = -30V

ID = -4.3A (VGS = -10V)

RDS(ON) < 48mΩ(VGS = -10V)

RDS(ON) < 78mΩ(VGS = -4.5V)


Specifications

EU RoHS Compliant

Product Category Power MOSFET

Channel Mode Enhancement

Channel Type P

Number of Elements per Chip 1

Maximum Drain Source Voltage (V) 30

Maximum Gate Source Voltage (V) ±20

Maximum Continuous Drain Current (A) 4.3

Maximum Drain Source Resistance (mOhm) 48@10V

Typical Gate Charge @ Vgs (nC) 9.2@10V|4.6@4.5V

Typical Gate Charge @ 10V (nC) 9.2

Typical Input Capacitance @ Vds (pF) 668@15V

Maximum Power Dissipation (mW) 1400

Minimum Operating Temperature (°C) -55

Maximum Operating Temperature (°C) 150

Mounting Surface Mount

Package Height (mm) 1

Package Length (mm) 2.9

Package Width (mm) 1.6

PCB changed 3

Standard Package Name SOT

Supplier Package SOT-23

Pin Count 3

Lead Shape Gull-wing


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